Our technology is what enables our sensors to offer high performance and cost-efficient measurements of lateral magnetic fields. Our hall technology is based on patented true 3-dimensional hall technology.

This is enabled by our long-term experience in backside wafer processing. We use n++/n substrate with optimum epi concentration with no p-n junctions. Wafers are stacked using TSV bridge topology. Deep trench isolation enables full dielectric isolation of the hall. Our technology enables the stacking of logic wafer with sensor wafer and thus offers the highest possible integration density of a product.
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